Articles in peer-reviewed journals
|Dc Conductivity Mechanisms in Amorphous Group-IV Semiconductors|
|Maloufi N., Audouard A., Piecuch M., Marchal G.|
|Physical Review Letters 56 (1986) 2307|
|DOI : 10.1103/PhysRevLett.56.2307|
dc conductivity measurements have been performed at low temperature in amorphous SixSn1-x semiconductor alloys. It is shown that the experimental results are correctly explained by the variable-range-hopping theory, whereas the present form of the small-polaron model is unable to account for the low-temperature experimental results. The values of the physical parameters extracted from the variable-range-hopping theory are physically reasonable and give some information about the electronic energy levels within the semiconductor band gap.