Gruppo di Fisica Statistica

Gruppo 106, Institut Jean Lamour

                     
Home
Dove
Personale
Pubblicazioni
Articoli in riviste
Lettere
Proceeding di conferenze per invito
Proceeding di conferenze
Non pubblicato
Ph.D
Habilitation à diriger des recherches
Epistemologia e storia della scienza
Articoli pedagogici
Libri
Editori
Capitoli di libri
Divulgazione
Seminari
Workshops
Scuole
Internazionale
Gruppo di Lavoro
Posizioni
Insegnamento

Articoli in riviste

Exchange bias like effect induced by domain walls in FeGd/FeSn bilayers
Canet F., Bellouard C., Mangin S., Chatelain C., Senet C., Siebrecht R., Leiner V., Piecuch M.
European Physical Journal B 34 (2003) 381
DOI : 10.1140/epjb/e2003-00235-y

A study of exchange bias phenomenon in ferrimagnetic /ferromagnetic FeGd/ FeSn bilayers is presented. The amorphous FeSn and FeGd alloys have been grown by co-evaporation. Specific growth conditions allow to induce an uniaxial anisotropy in both alloys in a parallel direction. After saturation of the bilayers under a positive field, the hysteresis loop of one of the layer is shifted towards a positive field H E . The sign of the exchange bias field H E is shown to be due to the antiferromagnetic coupling between the net magnetizations of both alloys. The field H E is studied as a function of the thickness of each layer and of the temperature. Using ac-susceptibility measurements and polarized neutron reflectometry, it is shown that the reversal of magnetization of the bilayers is dominated by the presence of a domain wall at the interface. This exchange bias system is shown to act as a potential well for the magnetic domain wall. Within this assumption and thanks to a precise magnetic characterization of each alloy, the evolution of H E with the thickness of the layers is well reproduced using simple one-dimensional analytical models for the domain wall or a more elaborate numerical approach.



Inizio pagina