Articles dans des revues à comité de lecture
|Electromigration d'impuretés dans Cu et Ni|
|Guilmin P., Turban L., Gerl M.|
|Journal of Physics and Chemistry of Solids 34 (1973) 951|
|DOI : 10.1016/S0022-3697(73)80003-4|
The effective valency of 59Fe, 58Co and 125Sb in Cu and 59Fe, 125Sb in Ni has been determined using the thin-layer technique. The impurities are observed to move to the cathode in Ni, showing that the scattering of the holes of the d band dominates s scattering in Ni. In the Cu matrix, the resistivities obtained at the saddle point are rather small. A tentative explanation is given in terms of a virtual bound level on the impurity.